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Model No.: NSO4GU3AB
Pengangkutan: Ocean,Air,Express,Land
Jenis bayaran: L/C,T/T,D/A
Incoterm: FOB,EXW,CIF
4GB 1600MHz 240-pin DDR3 udimm
Sejarah Semakan
Revision No. |
History |
Draft Date |
Remark |
1.0 |
Initial Release |
Apr. 2022 |
|
Jadual maklumat pesanan
Model |
Density |
Speed |
Organization |
Component Composition |
NS04GU3AB |
4GB |
1600MHz |
512Mx64bit |
DDR3 256Mx8 *16 |
Penerangan
Hengstar Unbuffered DDR3 SDRAM DIMMS (kadar data dua kali ganda yang tidak disengajakan oleh modul memori dalam talian DRAM) adalah modul memori yang rendah, modul memori operasi berkelajuan tinggi yang menggunakan peranti DDR3 SDRAM. NS04GU3AB adalah 512m x 64-bit dua pangkat 4GB DDR3-1600 CL11 1.5V SDRAM Produk Dimm Unbuffered, berdasarkan enam belas 256m x 8-bit komponen FBGA. SPD diprogramkan kepada latency standard JEDEC DDR3-1600 masa 11-11-11 pada 1.5V. Setiap 240-pin DIMM menggunakan jari sentuhan emas. SDRAM Unbuffered DIMM bertujuan untuk digunakan sebagai memori utama apabila dipasang dalam sistem seperti PC dan stesen kerja.
ciri-ciri
Kuasa Bekalan: VDD = 1.5V (1.425V hingga 1.575V)
VDDQ = 1.5V (1.425V hingga 1.575V)
800MHz FCK untuk 1600MB/sec/pin
8 bank dalaman bebas
Latihan CAS Programmable: 11, 10, 9, 8, 7, 6
Latihan bahan tambahan yang boleh diprogramkan: 0, Cl - 2, atau Cl - 1 jam
8-bit pre-fetch
Burst Length: 8 (interleave tanpa sebarang had, berurutan dengan alamat permulaan "000" sahaja), 4 dengan TCCD = 4 yang tidak membenarkan membaca atau menulis lancar [sama ada dengan cepat menggunakan A12 atau MRS]
Strob data pembezaan-arah-arah-arah
Ternal (diri) penentukuran; Penentukuran diri dalaman melalui pin ZQ (RZQ: 240 ohm ± 1%)
Dalam penamatan mati menggunakan pin odt
Teriage Refresh Tempoh 7.8US pada lebih rendah daripada TCase 85 ° C, 3.9US pada 85 ° C <tcase <95 ° C
Asynchronous Reset
Kekuatan pemacu output data yang boleh laras
Fly-by Topology
PCB: Ketinggian 1.18 "(30mm)
Rohs mematuhi dan bebas halogen
Parameter masa utama
MT/s |
tRCD(ns) |
tRP(ns) |
tRC(ns) |
CL-tRCD-tRP |
DDR3-1600 |
13.125 |
13.125 |
48.125 |
2011/11/11 |
Jadual Alamat
Configuration |
Refresh count |
Row address |
Device bank address |
Device configuration |
Column Address |
Module rank address |
4GB |
8K |
32K A[14:0] |
8 BA[2:0] |
2Gb (256 Meg x 8) |
1K A[9:0] |
2 S#[1:0] |
Penerangan PIN
Symbol |
Type |
Description |
Ax |
Input |
Address inputs: Provide the row address for ACTIVE commands, and the column |
BAx |
Input |
Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or |
CKx, |
Input |
Clock: Differential clock inputs. All control, command, and address input signals are |
CKEx |
Input |
Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry |
DMx |
Input |
Data mask (x8 devices only): DM is an input mask signal for write data. Input data is |
ODTx |
Input |
On-die termination: Enables (registered HIGH) and disables (registered LOW) |
Par_In |
Input |
Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. |
RAS#, |
Input |
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being |
RESET# |
Input |
Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and |
Sx# |
Input |
Chip select: Enables (registered LOW) and disables (registered HIGH) the command |
SAx |
Input |
Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address |
SCL |
Input |
Serial |
CBx |
I/O |
Check bits: Used for system error detection and correction. |
DQx |
I/O |
Data input/output: Bidirectional data bus. |
DQSx, |
I/O |
Data strobe: Differential data strobes. Output with read data; edge-aligned with read data; |
SDA |
I/O |
Serial |
TDQSx, |
Output |
Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD |
Err_Out# |
Output (open |
Parity error output: Parity error found on the command and address bus. |
EVENT# |
Output (open |
Temperature event: The EVENT# pin is asserted by the temperature sensor when critical |
VDD |
Supply |
Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The |
VDDSPD |
Supply |
Temperature sensor/SPD EEPROM power supply: 3.0–3.6V. |
VREFCA |
Supply |
Reference voltage: Control, command, and address VDD/2. |
VREFDQ |
Supply |
Reference voltage: DQ, DM VDD/2. |
VSS |
Supply |
Ground. |
VTT |
Supply |
Termination voltage: Used for control, command, and address VDD/2. |
NC |
– |
No connect: These pins are not connected on the module. |
NF |
– |
No function: These pins are connected within the module, but provide no functionality. |
Nota : Jadual penerangan pin di bawah adalah senarai komprehensif semua pin yang mungkin untuk semua modul DDR3. Semua pin yang disenaraikan mungkin tidak disokong pada modul ini. Lihat tugasan PIN untuk maklumat khusus untuk modul ini.
Rajah blok fungsional
Modul 4GB, 512mx64 (2rank x8)
Dimensi modul
Pandangan hadapan
Pandangan hadapan
Nota:
1.Semua dimensi berada dalam milimeter (inci); Max/min atau tipikal (typ) di mana dinyatakan.
2.Toolance pada semua dimensi ± 0.15mm melainkan dinyatakan sebaliknya.
3. Gambar rajah dimensi hanya untuk rujukan.
Kategori produk : Aksesori Modul Pintar Perindustrian
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.