Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

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Shenzhen Hengstar Technology Co., Ltd.
HomeProduk-produkAksesori Modul Pintar PerindustrianSpesifikasi modul memori DDR3 UDIMM

Spesifikasi modul memori DDR3 UDIMM

Jenis bayaran:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Pesanan minimum:
1 Piece/Pieces
Pengangkutan:
Ocean,Air,Express,Land
  • Penerangan produk
Overview
Atribut Produk

Model No.NSO4GU3AB

Membekalkan Keupayaan & Maklumat Tambaha...

PengangkutanOcean,Air,Express,Land

Jenis bayaranL/C,T/T,D/A

IncotermFOB,EXW,CIF

Pembungkusan & Penghantaran
Unit Jualan:
Piece/Pieces

4GB 1600MHz 240-pin DDR3 udimm


Sejarah Semakan

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Jadual maklumat pesanan

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Penerangan
Hengstar Unbuffered DDR3 SDRAM DIMMS (kadar data dua kali ganda yang tidak disengajakan oleh modul memori dalam talian DRAM) adalah modul memori yang rendah, modul memori operasi berkelajuan tinggi yang menggunakan peranti DDR3 SDRAM. NS04GU3AB adalah 512m x 64-bit dua pangkat 4GB DDR3-1600 CL11 1.5V SDRAM Produk Dimm Unbuffered, berdasarkan enam belas 256m x 8-bit komponen FBGA. SPD diprogramkan kepada latency standard JEDEC DDR3-1600 masa 11-11-11 pada 1.5V. Setiap 240-pin DIMM menggunakan jari sentuhan emas. SDRAM Unbuffered DIMM bertujuan untuk digunakan sebagai memori utama apabila dipasang dalam sistem seperti PC dan stesen kerja.


ciri-ciri
 Kuasa Bekalan: VDD = 1.5V (1.425V hingga 1.575V)
VDDQ = 1.5V (1.425V hingga 1.575V)
800MHz FCK untuk 1600MB/sec/pin
8 bank dalaman bebas
 Latihan CAS Programmable: 11, 10, 9, 8, 7, 6
 Latihan bahan tambahan yang boleh diprogramkan: 0, Cl - 2, atau Cl - 1 jam
8-bit pre-fetch
 Burst Length: 8 (interleave tanpa sebarang had, berurutan dengan alamat permulaan "000" sahaja), 4 dengan TCCD = 4 yang tidak membenarkan membaca atau menulis lancar [sama ada dengan cepat menggunakan A12 atau MRS]
 Strob data pembezaan-arah-arah-arah
Ternal (diri) penentukuran; Penentukuran diri dalaman melalui pin ZQ (RZQ: 240 ohm ± 1%)
Dalam penamatan mati menggunakan pin odt
Teriage Refresh Tempoh 7.8US pada lebih rendah daripada TCase 85 ° C, 3.9US pada 85 ° C <tcase <95 ° C
Asynchronous Reset
 Kekuatan pemacu output data yang boleh laras
Fly-by Topology
PCB: Ketinggian 1.18 "(30mm)
Rohs mematuhi dan bebas halogen


Parameter masa utama

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Jadual Alamat

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Penerangan PIN

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Nota : Jadual penerangan pin di bawah adalah senarai komprehensif semua pin yang mungkin untuk semua modul DDR3. Semua pin yang disenaraikan mungkin tidak disokong pada modul ini. Lihat tugasan PIN untuk maklumat khusus untuk modul ini.


Rajah blok fungsional

Modul 4GB, 512mx64 (2rank x8)

1


2


Catatan:
1. Bola ZQ pada setiap komponen DDR3 disambungkan ke perintang luaran 240Ω ± 1% yang terikat ke tanah. Ia digunakan untuk penentukuran pemacu dan pemacu output komponen.



Dimensi modul


Pandangan hadapan

3

Pandangan hadapan

4

Nota:
1.Semua dimensi berada dalam milimeter (inci); Max/min atau tipikal (typ) di mana dinyatakan.
2.Toolance pada semua dimensi ± 0.15mm melainkan dinyatakan sebaliknya.
3. Gambar rajah dimensi hanya untuk rujukan.

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